AiT SEMi thrilled to announce the release of our latest high-performance power solution — the AM025NS10HPJ. This N-Channel MOSFET leverages advanced Split Gate Trench (SGT) technology, specifically engineered for power management systems that demand maximum efficiency and reliability.
Key Features of AM025NS10HPJ:
- Ultra-Low R_DS(ON): Features an impressive typical resistance of just 2.5mΩ (@VGS=10V), significantly minimizing conduction losses.
- High Current Capability: Supports a continuous drain current of up to 165A (TC=25 〫C) to handle demanding power loads.
- Proven Reliability: 100% UIS ( Unclamped Inductive Switching ) and ∆Vds tested to ensure robust performance even in the most challenging environments.
- Optimized Packaging: Available in a compact PDFN8(5×6) package for superior thermal management and space-saving designs.
Target Applications:
- AI Servers
- Load Switches
- PWM Applications
- Power Management Systems
As a Leading supplier of power semiconductor, AIT Semiconductor, we are committed to providing innovative semiconductor solutions that empower engineers to build the next generation of efficient electronics.
Explore more power semiconductor at: www.ait-ic.com
